IMLT40R011M2HXTMA1 vs IMLT65R040M2HXTMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IMLT40R011M2HXTMA1 tarafından Infineon ve IMLT65R040M2HXTMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IMLT40R011M2HXTMA1 IMLT65R040M2HXTMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC MOSFET 400V G2 CoolSiC™ G2 (2nd generation SiC trench)
Transistor Türü N-Channel SiC MOSFET —
Drain-Source Voltage (VDS) 400 V 650 V
Continuous Drain Current (ID, Tc) 144 A —
Power Dissipation (PD, Tc) 429 W —
On-State Resistance (RDS(on)) 11 mΩ (typ) —
Gate Threshold Voltage (VGS(th)) 4.5 V (benchmark) —
Recommended Gate Drive Voltage 0 V to 18 V —
Technology Silicon Carbide (SiC) Gen-2 Silicon Carbide (SiC) N-channel MOSFET
Body Diode Commutation-robust fast body diode, low Qrr —
Avalanche Rating 100% avalanche tested —
Paket PG-HDSOP-16-8 (surface mount, top-side cooled) PG-HDSOP-16-6 (surface mount, top-side-cooled)
Montaj Türü Surface Mount Surface Mount
Interconnection Technology XT (best-in-class thermal performance) —
Operating Mode Enhancement mode —
Target Topologies 2- and 3-level hard- and soft-switching —
Target Applications AI server PSU, SMPS, motor drives —
RoHS Durumu Compliant —
Continuous Drain Current (ID, TC) — 57 A
Pulsed Drain Current (ID,pulse) — 143 A
On-State Resistance RDS(on) (typ, VGS=18V) — 40 mΩ
On-State Resistance RDS(on) (max, VGS=18V) — 49 mΩ
Total Gate Charge QG — 28 nC
Output Charge QOSS @ 400 V — 53 nC
Output Energy EOSS @ 400 V — 7.2 µJ
Continuous Drain Power Dissipation (PD, TC) — 268 W
Recommended Gate Drive Voltage VGS — 18 V (turn-off: 0 V or negative)
İşletim Jant Sıcaklığı — -55 °C to +150 °C
Qualification — JEDEC industrial
Packaging — Tape & Reel
Special Features — Kelvin source pin, low reverse-recovery charge, hard-switching optimized

Dökümanlar & Kaynaklar

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