IQE031N08LM6CGSCATMA1 vs IQE050N08NM5CGATMA1 तुलना
विस्तृत दोनों ओर की तुलना IQE031N08LM6CGSCATMA1 द्वारा Infineon और IQE050N08NM5CGATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ सक्रियInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IQE031N08LM6CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 (40 V to 100 V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| पैकेज | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-1 (Surface Mount) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -55 C to +175 C (junction, typical for OptiMOS 6) | — |
| Avalanche Tested | 100% avalanche tested | — |
| MSL स्तर | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | [DATA_NEEDED: MSL rating] |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| ऑपरेटिंग तापमान | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |