IRF9Z34NPBF vs IRFR5505TRPBF तुलना
विस्तृत दोनों ओर की तुलना IRF9Z34NPBF द्वारा Infineon और IRFR5505TRPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRF9Z34NPBF | IRFR5505TRPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | — |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss] |
| ऑपरेटिंग तापमान रेंज | -55C to +175C (junction) | — |
| पैकेज | TO-220AB (through-hole, 3-pin) | TO-252AA (DPAK), surface mount |
| माउंटिंग प्रकार | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| RoHS स्थिति | Compliant | Compliant (PBF suffix) |
| Series | — | HEXFET |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -18 A |
| Pulsed Drain Current (IDM) | — | -72 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| ऑपरेटिंग जंक्शन तापमान | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 50 C/W (typical, DPAK on 1 oz copper) |
| Lead-Free | — | Yes (PBF suffix) |