IRF9Z34NPBF vs IRFR5505TRPBF 비교

다음의 상세 나란히 비교: IRF9Z34NPBF 제조: Infineon 및 IRFR5505TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF9Z34NPBF IRFR5505TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.65 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A —
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] —
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] [DATA_NEEDED: Ciss]
동작 온도 범위 -55C to +175C (junction) —
패키지 TO-220AB (through-hole, 3-pin) TO-252AA (DPAK), surface mount
실장 유형 Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) IR MOSFET (HEXFET 5th generation)
Lead-Free / Halogen-Free Yes (PBF suffix) —
RoHS 상태 Compliant Compliant (PBF suffix)
Series — HEXFET
Polarity — P-Channel
Drain-Source Voltage (VDS) max — -55 V
Continuous Drain Current (ID) at TC=25C — -18 A
Pulsed Drain Current (IDM) — -72 A
Gate-Source Voltage (VGS) max — +/-20 V
On-Resistance RDS(on) max at VGS=-10V — 110 mOhm
Total Gate Charge (Qg) — 21.3 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
동작 접합 온도 — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)
Lead-Free — Yes (PBF suffix)

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