ISC016N08NM8ATMA1 vs IQE036N08NM6CGSCATMA1 तुलना
विस्तृत दोनों ओर की तुलना ISC016N08NM8ATMA1 द्वारा Infineon और IQE036N08NM6CGSCATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | ISC016N08NM8ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| ऑपरेटिंग तापमान रेंज | -55 C to +150 C (junction) | -55 C to +150 C (junction, per datasheet derating curves) |
| पैकेज | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | Trench MOSFET (OptiMOS 6) |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| MSL स्तर | 1 (per JEDEC J-STD-020E classification for SuperSO8) | — |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| पैकेज / केस | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |