ISC016N08NM8ATMA1 vs IQE036N08NM6CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC016N08NM8ATMA1 sa pamamagitan ng Infineon at IQE036N08NM6CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC016N08NM8ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55 C to +150 C (junction, per datasheet derating curves) |
| Packhaging | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | Trench MOSFET (OptiMOS 6) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | — |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| Packhaging / Kaso | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |