ISC016N08NM8ATMA1 vs IQE036N08NM6CGSCATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and IQE036N08NM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | ISC016N08NM8ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | β |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | β |
| Pulsed Drain Current (IDM) at Tc | 268 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 263 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +150 C (junction, per datasheet derating curves) |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | Trench MOSFET (OptiMOS 6) |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | β |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | β |
| Series | β | OptiMOS 6 |
| Part Status | β | Active |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at TA | β | 16.7 A |
| Continuous Drain Current (ID) at TC | β | 118 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 125 W |
| Package / Case | β | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | β | Source Down, Center Gate, Dual-Side Cooling |
| Packing | β | Tape and Reel (suffix ATMA1) |
| Voltage Rating | β | 60 V to 100 V category (80 V nominal) |