MPXV5010GC6T1 vs MPXV5010DP तुलना
विस्तृत दोनों ओर की तुलना MPXV5010GC6T1 द्वारा NXP Semiconductors और MPXV5010DP द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MPXV5010GC6T1 | MPXV5010DP |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Pressure Sensors | Pressure Sensors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | [DATA_NEEDED: maximum overload] |
| आउटपुट प्रकार | Analog Voltage, Ratiometric | Analog, Ratiometric |
| आउटपुट वोल्टेज रेंज | 0.2 V to 4.7 V (at VCC = 5 V) | 0.2 V to 4.7 V |
| Supply Voltage (VCC) | 4.75 V to 5.25 V | — |
| सप्लाई करंट | [DATA_NEEDED: typical supply current] | — |
| Pressure Port | Top-port male 0.13" (3.17 mm) tube | — |
| पैकेज | 8-SO (Small Outline), Gull-Wing SMD | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान | 0 C to +85 C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Linearity | 1.0 % typical (over 0 kPa to 10 kPa) | — |
| Temperature Compensation | On-chip, 0 C to +85 C | — |
| Signal Conditioning | On-chip ASIC, calibrated | — |
| Media Compatibility | Air and non-corrosive gases | — |
| RoHS स्थिति | Compliant | Compliant |
| सप्लाई वोल्टेज | — | 5 V nominal (4.75 V to 5.25 V) |
| Accuracy | — | 5 % (over 0 C to 85 C) |
| Response Time | — | 1 ms typical |
| Compensated Temperature | — | 0 C to 85 C |
| Port Style | — | Male, 0.13 in (3.3 mm) tube, Dual, Same Side |
| Technology | — | Piezoresistive, MEMS, On-chip Signal Conditioned |