MPXV5010GC6T1 vs MPXV5010DP Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPXV5010GC6T1 tarafından NXP Semiconductors ve MPXV5010DP tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MPXV5010GC6T1 | MPXV5010DP |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | [DATA_NEEDED: maximum overload] |
| Çıkış Türü | Analog Voltage, Ratiometric | Analog, Ratiometric |
| Çıkış Gerilimi Aralığı | 0.2 V to 4.7 V (at VCC = 5 V) | 0.2 V to 4.7 V |
| Supply Voltage (VCC) | 4.75 V to 5.25 V | — |
| Besleme Akımı | [DATA_NEEDED: typical supply current] | — |
| Pressure Port | Top-port male 0.13" (3.17 mm) tube | — |
| Paket | 8-SO (Small Outline), Gull-Wing SMD | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | 0 C to +85 C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Linearity | 1.0 % typical (over 0 kPa to 10 kPa) | — |
| Temperature Compensation | On-chip, 0 C to +85 C | — |
| Signal Conditioning | On-chip ASIC, calibrated | — |
| Media Compatibility | Air and non-corrosive gases | — |
| RoHS Durumu | Compliant | Compliant |
| Besleme Gerilimi | — | 5 V nominal (4.75 V to 5.25 V) |
| Accuracy | — | 5 % (over 0 C to 85 C) |
| Response Time | — | 1 ms typical |
| Compensated Temperature | — | 0 C to 85 C |
| Port Style | — | Male, 0.13 in (3.3 mm) tube, Dual, Same Side |
| Technology | — | Piezoresistive, MEMS, On-chip Signal Conditioned |