MRF5S21100HSR3 vs MRF5S21100HSR5 तुलना
विस्तृत दोनों ओर की तुलना MRF5S21100HSR3 द्वारा NXP Semiconductors और MRF5S21100HSR5 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 ObsoleteNXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF5S21100HSR3 | MRF5S21100HSR5 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | Obsolete | सक्रिय |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Obsolete | Active |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET |
| Frequency | 2.16 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1.05 A | — |
| Power Output (Avg, 2x W-CDMA) | 23 W | — |
| Power Gain | 13.5 dB | 13.5 dB (typical) |
| Voltage - Rated (Max V DSS) | 65 V | — |
| Maximum VDD Operation | 32 V (qualified) | — |
| पैकेज / केस | NI-780S (lower thermal resistance, ceramic flanged) | NI-780S (ceramic flange-mount) |
| Supplier Device Package | NI-780S | — |
| Configuration | Single, Class AB | — |
| माउंटिंग प्रकार | Chassis / flange mount (through-hole, surface ceramic) | Chassis / Flange Mount (through-hole RF) |
| RoHS स्थिति | Compliant (low gold plating, 40 microinches nominal) | [DATA_NEEDED: RoHS status from NXP product page] |
| ESD Protection | Integrated | — |
| Matching | Internally matched (input and output) | — |
| Lead Finish | Gold, 40 microinches nominal | — |
| Packaging | Tape and Reel | — |
| Designed Application | W-CDMA, TDMA, CDMA, multicarrier base station PA | — |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Operating Frequency | — | 2.16 GHz to 2.17 GHz |
| Drain-to-Source Voltage (Vdss) Max | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Output Power (Pout) | — | 23 W (CW) |
| Drain Current (Id) | — | 1.05 A |
| ऑपरेटिंग तापमान रेंज | — | -40C to +150C (junction) |
| Lead-Free | — | [DATA_NEEDED: lead-free finish] |