MRF9030LR1 vs MRF9030MBR1 तुलना
विस्तृत दोनों ओर की तुलना MRF9030LR1 द्वारा NXP Semiconductors और MRF9030MBR1 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors
MRF9030LR1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF9030LR1 | MRF9030MBR1 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| ट्रांज़िस्टर प्रकार | N-Channel Lateral MOSFET (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Enhancement-Mode Lateral RF Sub-Micron MOSFET | — |
| Operating Frequency | Up to 1000 MHz (1.0 GHz) | — |
| Test Frequency | 945 MHz | — |
| Drain-Source Voltage (Vdss) | 68 V | — |
| Continuous Drain Current (Id) | 250 mA (datasheet typical) | — |
| Output Power (Pout) | 30 W (CW / pulsed RF) | — |
| Power Gain (Gp) | 19 dB (typical at 945 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency %] | — |
| Supply Voltage (Vdd) | 26 V (typical base-station bias) | — |
| Maximum Power Dissipation | 92 W (absolute, with proper heatsinking) | — |
| पैकेज | NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source) | TO-272-2 (ceramic, 2-lead flanged) |
| माउंटिंग प्रकार | Chassis / heatsink mount (flanged ceramic) | Surface Mount (flanged ceramic) |
| ऑपरेटिंग तापमान | -40C to +150C (junction, derated) | — |
| Storage Temperature | -65C to +150C | — |
| Configuration | Single transistor, common-source | Single, common-source |
| Lead Finish | Gold-plated (per NI-360 case 360B-05) | — |
| MSL स्तर | Not applicable (non-SMD ceramic flange) | — |
| RoHS स्थिति | Compliant (per current NXP product page) | [DATA_NEEDED: RoHS compliance status from manufacturer page] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola) |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| Maximum Dissipation (per Partstack) | — | 139 W |
| नमी संवेदनशीलता स्तर (MSL) | — | 3 |
| Application | — | Broadband RF power amplifier / large-signal common-source amplifier |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |