MRF9030LR1 vs MRF9030MBR1 比較

詳細並排比較 MRF9030LR1 由 NXP Semiconductors 與 MRF9030MBR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF9030LR1 MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors

MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors

MRF9030LR1 ✓ 啟用中
NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ 啟用中

規格比較

參數 MRF9030LR1 MRF9030MBR1
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel Lateral MOSFET (RF Power) N-Channel Enhancement-Mode Lateral MOSFET
Technology Enhancement-Mode Lateral RF Sub-Micron MOSFET —
Operating Frequency Up to 1000 MHz (1.0 GHz) —
Test Frequency 945 MHz —
Drain-Source Voltage (Vdss) 68 V —
Continuous Drain Current (Id) 250 mA (datasheet typical) —
Output Power (Pout) 30 W (CW / pulsed RF) —
Power Gain (Gp) 19 dB (typical at 945 MHz) —
Drain Efficiency [DATA_NEEDED: typical drain efficiency %] —
Supply Voltage (Vdd) 26 V (typical base-station bias) —
Maximum Power Dissipation 92 W (absolute, with proper heatsinking) —
封裝 NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source) TO-272-2 (ceramic, 2-lead flanged)
安裝類型 Chassis / heatsink mount (flanged ceramic) Surface Mount (flanged ceramic)
工作溫度 -40C to +150C (junction, derated) —
Storage Temperature -65C to +150C —
Configuration Single transistor, common-source Single, common-source
Lead Finish Gold-plated (per NI-360 case 360B-05) —
MSL 等級 Not applicable (non-SMD ceramic flange) —
RoHS 狀態 Compliant (per current NXP product page) [DATA_NEEDED: RoHS compliance status from manufacturer page]
Manufacturer — NXP Semiconductors (formerly Freescale / Motorola)
Part Family — RF Sub-Micron MOSFET Line
Typical Output Power — 30 W at 945 MHz
Operating Frequency Range — DC to 1000 MHz
Power Gain (typical) — 20 dB
Drain-Source Voltage (Vds) Rating — 26 V
Typical Bias Current — 250 mA
Maximum Dissipation (per Partstack) — 139 W
濕度敏感等級 (MSL) — 3
Application — Broadband RF power amplifier / large-signal common-source amplifier
Polarity / Channel Mode — N-Channel, enhancement-mode

資料表與資源

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