RTAX2000D-CQ352V vs RTAX2000D-1CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000D-CQ352V द्वारा Microchip Technology और RTAX2000D-1CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-CQ352V ✓ सक्रियMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000D-CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 29,568 |
| Configurable Logic Blocks (CLBs) | 19,712 | — |
| User I/O - Inputs | 166 | — |
| User I/O - Outputs | 166 | — |
| Supply Voltage (Core) | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | CMOS, antifuse one-time programmable | Digital CMOS, antifuse (nonvolatile) |
| पैकेज | CQFP352 ceramic quad flat pack | CQFP-352 (CQ352), ceramic |
| Terminal Pitch | 0.500 mm | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Configuration | One-time programmable (antifuse) | Live at power-up, single-chip, no external configuration device |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Radiation Tolerance | Radiation-tolerant (space-flight applications) | — |
| Application Domain | Space-flight systems | — |
| Commercial Baseline Family | Actel/Microsemi Axcelerator | — |
| Equivalent Gates | — | 2,000,000 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Speed Grade | — | -1 |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| ऑपरेटिंग तापमान | — | [DATA_NEEDED: Operating Temperature] |
| RoHS स्थिति | — | [DATA_NEEDED: RoHS Status] |