RTAX2000DL-1CQ352B vs RTAX2000DL-CQ352B तुलना
विस्तृत दोनों ओर की तुलना RTAX2000DL-1CQ352B द्वारा Microchip Technology और RTAX2000DL-CQ352B द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ सक्रियMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000DL-1CQ352B | RTAX2000DL-CQ352B |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Equivalent System Gates | 2000000 | 2,000,000 |
| Logic Cells | 29568 | [DATA_NEEDED: Logic Cells] |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Core Supply Voltage (Nominal) | 1.5 V | 1.5 V |
| Core Supply Voltage Range | 1.425 V to 1.575 V | 1.425 V to 1.575 V |
| Maximum Combinatorial Delay | 0.930 ns | — |
| DSP Mathblocks (max) | 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | 540 kbits (with optional EDAC protection) | Up to 540 kbits with optional EDAC protection |
| Technology | CMOS, antifuse (OTP, nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| पैकेज | CQFP-352 (ceramic quad flat pack) | 352-terminal ceramic CQFP, metal-sealed |
| Terminal Count | 352 | — |
| Input / Output Terminals | 166 input, 166 output | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Radiation Tolerance Class | Radiation-tolerant (space-flight) | — |
| Configuration | Live at power-up (antifuse, single chip) | Live at power-up, no external boot PROM required |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Terminal Pitch | — | 0.500 mm |
| ऑपरेटिंग तापमान | — | [DATA_NEEDED: Operating Temperature Range] |
| Application Domain | — | Space flight systems |