RTAX2000DL-1CQ352V vs RTAX2000D-1CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000DL-1CQ352V द्वारा Microchip Technology और RTAX2000D-1CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ सक्रियMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000DL-1CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-DSP (RTAX2000DL) | — |
| Equivalent System Gates | 2,000,000 (approx.) | — |
| Logic Cells | 29,568 | 29,568 |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.425 V to 1.575 V (nominal 1.5 V) |
| Technology | Digital CMOS | Digital CMOS, antifuse (nonvolatile) |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live at power-up, single-chip, no external configuration device |
| Speed Grade | -1 | -1 |
| पैकेज | CQ352 (352-pin ceramic QFP) | CQFP-352 (CQ352), ceramic |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| Equivalent Gates | — | 2,000,000 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits with optional EDAC protection |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |