RTAX2000DL-1CQ352V vs RTAX2000D-1CQ352V Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-1CQ352V sa pamamagitan ng Microchip Technology at RTAX2000D-1CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX2000DL-1CQ352V RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352V ✓ Nakahanda
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX2000DL-1CQ352V RTAX2000D-1CQ352V
Brand Microchip Technology Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family RTAX-DSP (RTAX2000DL) —
Equivalent System Gates 2,000,000 (approx.) —
Logic Cells 29,568 29,568
CLBs 19,712 19,712
Core Supply Voltage 1.425 V to 1.575 V (nominal 1.5 V) 1.425 V to 1.575 V (nominal 1.5 V)
Technology Digital CMOS Digital CMOS, antifuse (nonvolatile)
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant (RTAX-DSP) —
Configuration Live at power-up, no external boot memory Live at power-up, single-chip, no external configuration device
Speed Grade -1 -1
Packhaging CQ352 (352-pin ceramic QFP) CQFP-352 (CQ352), ceramic
Uri ng Pagpapasok Surface Mount Surface Mount
Application Domain Space-flight systems —
Special Features DSP multiply-accumulate blocks (DL variant) —
Tindminan RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Temperature na Operasyon [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: Operating Temperature]
Embedded SRAM [DATA_NEEDED: Embedded SRAM capacity] —
Equivalent Gates — 2,000,000
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits with optional EDAC protection
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita