RTAX2000S-1CGS624V vs RTAX2000S-1CG624PROTO तुलना
विस्तृत दोनों ओर की तुलना RTAX2000S-1CGS624V द्वारा Microchip Technology और RTAX2000S-1CG624PROTO द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000S-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CGS624V ✓ सक्रियMicrochip Technology
RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG624PROTO ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000S-1CGS624V | RTAX2000S-1CG624PROTO |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S Radiation-Tolerant FPGA | RTAX-S/SL Radiation-Tolerant FPGA |
| Equivalent System Gates | 2,000,000 | 2000000 |
| Configurable Logic Blocks (CLBs) | 21,504 | 21504 |
| Total Logic Cells | 32,256 | — |
| ASIC Gate Capacity (companion) | 250,000 gates | — |
| Core Supply Voltage (nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Logic Family | CMOS | — |
| Speed Grade | -1 | -1 |
| ऑपरेटिंग तापमान | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| पैकेज | CG624 Ceramic Column Grid Array (CCGA), 624 balls | CCGA-624 (CG624 ceramic column grid array) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Programming Technology | Antifuse (one-time programmable) | — |
| SEU Hardening | SEU-hardened registers, immune to single-event upsets | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits (family max, with optional EDAC) |
| Configuration | Live at power-up, single-chip (no external config device) | Live at power-up (nonvolatile antifuse) |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Weight | [DATA_NEEDED: package weight] | — |
| Logic Cells | — | 32256 |
| User I/Os (family max) | — | 684 |
| Total Ionizing Dose (functional) | — | 300 krad (Si) |
| Total Ionizing Dose (parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Maximum System Frequency | — | 350 MHz (family performance) |
| Technology | — | CMOS antifuse (one-time programmable) |
| Qualification Flow | — | PROTO (engineering prototype) |