RTAX2000S-1CGS624V vs RTAX2000S-1CG624PROTO Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci RTAX2000S-1CGS624V disebabkan oleh Microchip Technology dan RTAX2000S-1CG624PROTO disebabkan oleh Microchip Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Microchip Technology
RTAX2000S-1CGS624V RTAX2000S-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CGS624V ✓ Aktif
Microchip Technology
RTAX2000S-1CG624PROTO RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO ✓ Aktif

Pengandingan Spesifikasi

Parametr RTAX2000S-1CGS624V RTAX2000S-1CG624PROTO
Merek Microchip Technology Microchip Technology
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family RTAX-S Radiation-Tolerant FPGA RTAX-S/SL Radiation-Tolerant FPGA
Equivalent System Gates 2,000,000 2000000
Configurable Logic Blocks (CLBs) 21,504 21504
Total Logic Cells 32,256 —
ASIC Gate Capacity (companion) 250,000 gates —
Core Supply Voltage (nominal) 1.5 V —
Core Supply Voltage Range 1.425 V to 1.575 V —
Logic Family CMOS —
Speed Grade -1 -1
Suhu Operasi -55C to +125C [DATA_NEEDED: operating temperature range]
Kemasan CG624 Ceramic Column Grid Array (CCGA), 624 balls CCGA-624 (CG624 ceramic column grid array)
Jenis Pemasangan Surface Mount Surface Mount
Programming Technology Antifuse (one-time programmable) —
SEU Hardening SEU-hardened registers, immune to single-event upsets —
Embedded Memory Embedded SRAM with built-in FIFO control logic 540 kbits (family max, with optional EDAC)
Configuration Live at power-up, single-chip (no external config device) Live at power-up (nonvolatile antifuse)
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Weight [DATA_NEEDED: package weight] —
Logic Cells — 32256
User I/Os (family max) — 684
Total Ionizing Dose (functional) — 300 krad (Si)
Total Ionizing Dose (parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Maximum System Frequency — 350 MHz (family performance)
Technology — CMOS antifuse (one-time programmable)
Qualification Flow — PROTO (engineering prototype)

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