RTAX2000S-1CQ352PROTO vs RTAX2000D-1CQ352V तुलना

विस्तृत दोनों ओर की तुलना RTAX2000S-1CQ352PROTO द्वारा Microchip Technology और RTAX2000D-1CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Microchip Technology
RTAX2000S-1CQ352PROTO RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip

RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip

RTAX2000S-1CQ352PROTO ✓ सक्रिय
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ सक्रिय

विशेषता तुलना

पैरामीटर RTAX2000S-1CQ352PROTO RTAX2000D-1CQ352V
ब्रांड Microchip Technology Microchip Technology
श्रेणी FPGA & CPLD FPGA & CPLD
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Family RTAX-S Radiation-Tolerant FPGA —
Series RTAX2000S —
Configurable Logic Blocks (CLBs) 21504 —
Equivalent System Gates 2000000 —
Process Technology CMOS —
Programmability Type Antifuse (one-time programmable) —
Configuration Live at power-up, single chip Live at power-up, single-chip, no external configuration device
Speed Grade -1 -1
Device Designation PROTO (prototyping / engineering) —
Temperature Grade C (commercial) —
पैकेज CQFP352 (ceramic quad flat pack, 352 leads) CQFP-352 (CQ352), ceramic
माउंटिंग प्रकार Surface Mount Surface Mount
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
सप्लाई वोल्टेज [DATA_NEEDED: core supply voltage] —
Maximum I/O Count [DATA_NEEDED: user I/O count for CQ352 package] —
Embedded SRAM [DATA_NEEDED: embedded SRAM block capacity] —
ऑपरेटिंग तापमान [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
RoHS स्थिति [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Equivalent Gates — 2,000,000
Logic Cells — 29,568
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits with optional EDAC protection
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

डेटाशीट और संसाधन

सभी उत्पादों को देखें BOM बनाएं कीट की अनुरोध