RTAX2000S-1CQ352PROTO vs RTAX2000D-1CQ352V مقایسه
مقایسه دقیق کنار به کنار RTAX2000S-1CQ352PROTO توسط Microchip Technology و RTAX2000D-1CQ352V توسط Microchip Technology. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Microchip Technology
RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip
RTAX2000S-1CQ352PROTO ✓ فعالMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ فعالمقایسه مشخصات
| پارامتر | RTAX2000S-1CQ352PROTO | RTAX2000D-1CQ352V |
|---|---|---|
| برند | Microchip Technology | Microchip Technology |
| دسته‌بندی | FPGA & CPLD | FPGA & CPLD |
| وضعیت چرخه عمر | فعال | فعال |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Series | RTAX2000S | — |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Equivalent System Gates | 2000000 | — |
| Process Technology | CMOS | — |
| Programmability Type | Antifuse (one-time programmable) | — |
| Configuration | Live at power-up, single chip | Live at power-up, single-chip, no external configuration device |
| Speed Grade | -1 | -1 |
| Device Designation | PROTO (prototyping / engineering) | — |
| Temperature Grade | C (commercial) | — |
| بسته‌بندی | CQFP352 (ceramic quad flat pack, 352 leads) | CQFP-352 (CQ352), ceramic |
| نوع نصب | Surface Mount | Surface Mount |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| ولتاژ تغذیه | [DATA_NEEDED: core supply voltage] | — |
| Maximum I/O Count | [DATA_NEEDED: user I/O count for CQ352 package] | — |
| Embedded SRAM | [DATA_NEEDED: embedded SRAM block capacity] | — |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Equivalent Gates | — | 2,000,000 |
| Logic Cells | — | 29,568 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits with optional EDAC protection |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |