RTAX2000S-1CQ352PROTO vs RTAX2000D-1CQ352V Perbandingan

Perbandingan bersamaan detil RTAX2000S-1CQ352PROTO dari Microchip Technology dan RTAX2000D-1CQ352V dari Microchip Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Microchip Technology
RTAX2000S-1CQ352PROTO RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip

RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip

RTAX2000S-1CQ352PROTO ✓ Aktif
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum RTAX2000S-1CQ352PROTO RTAX2000D-1CQ352V
Merek Microchip Technology Microchip Technology
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family RTAX-S Radiation-Tolerant FPGA —
Series RTAX2000S —
Configurable Logic Blocks (CLBs) 21504 —
Equivalent System Gates 2000000 —
Process Technology CMOS —
Programmability Type Antifuse (one-time programmable) —
Configuration Live at power-up, single chip Live at power-up, single-chip, no external configuration device
Speed Grade -1 -1
Device Designation PROTO (prototyping / engineering) —
Temperature Grade C (commercial) —
Paket CQFP352 (ceramic quad flat pack, 352 leads) CQFP-352 (CQ352), ceramic
Tipe Mounting Surface Mount Surface Mount
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
Tegangan Pemuat [DATA_NEEDED: core supply voltage] —
Maximum I/O Count [DATA_NEEDED: user I/O count for CQ352 package] —
Embedded SRAM [DATA_NEEDED: embedded SRAM block capacity] —
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Equivalent Gates — 2,000,000
Logic Cells — 29,568
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits with optional EDAC protection
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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RTAX2000S-1CQ352PROTO

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