RTAX2000SL-1CQ352V vs RTAX2000DL-CQ352B तुलना
विस्तृत दोनों ओर की तुलना RTAX2000SL-1CQ352V द्वारा Microchip Technology और RTAX2000DL-CQ352B द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CQ352V ✓ सक्रियMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000SL-1CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| CLB Count | 21,504 | — |
| Logic Cells | 32,256 | [DATA_NEEDED: Logic Cells] |
| Core Supply Voltage | 1.5 V (1.425 V to 1.575 V) | — |
| Process Technology | CMOS, antifuse OTP interconnect | — |
| Radiation Tolerance | Radiation-tolerant (space flight grade) | — |
| Configuration | Live at power-up, single chip (antifuse) | Live at power-up, no external boot PROM required |
| Embedded Memory | Embedded SRAM with built-in FIFO control | Up to 540 kbits with optional EDAC protection |
| Clocking | Segmentable clock resources, chip-wide highway routing | — |
| पैकेज | 352-pin ceramic CQFP (CQ352) | 352-terminal ceramic CQFP, metal-sealed |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Application Domain | Space flight systems | Space flight systems |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| I/O Supply Voltage | [DATA_NEEDED: I/O bank voltage] | — |
| Total Ionizing Dose (TID) | [DATA_NEEDED: TID rating] | — |
| MSL स्तर | Not applicable (ceramic package) | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |