RTAX2000SL-1CQ352V vs RTAX2000DL-CQ352B مقایسه

مقایسه دقیق کنار به کنار RTAX2000SL-1CQ352V توسط Microchip Technology و RTAX2000DL-CQ352B توسط Microchip Technology. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.

Microchip Technology
RTAX2000SL-1CQ352V RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1CQ352V ✓ فعال
Microchip Technology
RTAX2000DL-CQ352B RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B ✓ فعال

مقایسه مشخصات

پارامتر RTAX2000SL-1CQ352V RTAX2000DL-CQ352B
برند Microchip Technology Microchip Technology
دسته‌بندی FPGA & CPLD FPGA & CPLD
وضعیت چرخه عمر فعال فعال
Family RTAX-S/SL Radiation-Tolerant FPGA —
Equivalent System Gates 2,000,000 2,000,000
CLB Count 21,504 —
Logic Cells 32,256 [DATA_NEEDED: Logic Cells]
Core Supply Voltage 1.5 V (1.425 V to 1.575 V) —
Process Technology CMOS, antifuse OTP interconnect —
Radiation Tolerance Radiation-tolerant (space flight grade) —
Configuration Live at power-up, single chip (antifuse) Live at power-up, no external boot PROM required
Embedded Memory Embedded SRAM with built-in FIFO control Up to 540 kbits with optional EDAC protection
Clocking Segmentable clock resources, chip-wide highway routing —
بسته‌بندی 352-pin ceramic CQFP (CQ352) 352-terminal ceramic CQFP, metal-sealed
نوع نصب Surface Mount Surface Mount
Application Domain Space flight systems Space flight systems
دمای کاری [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
I/O Supply Voltage [DATA_NEEDED: I/O bank voltage] —
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating] —
سطح MSL Not applicable (ceramic package) —
وضعیت RoHS [DATA_NEEDED: RoHS status] —
CLBs — 19,712
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Programming Technology — Nonvolatile antifuse
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parameter) — 200 krad (Si)
Core Supply Voltage (Nominal) — 1.5 V
Core Supply Voltage Range — 1.425 V to 1.575 V
Terminal Pitch — 0.500 mm

دیتاشیت‌ها و منابع

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