RTAX2000SL-1CQ352V vs RTAX2000DL-CQ352B השוואה
השוואה מפורטת זה לצד זה של RTAX2000SL-1CQ352V מאת Microchip Technology ו RTAX2000DL-CQ352B מאת Microchip Technology. השווה מפרטים עיקריים, פרמטרים חשמליים, אריזה, סטטוס מחזור חיים, תמחור וזמינות כדי לקבוע את הרכיב הטוב ביותר לדרישות העיצוב שלך.
Microchip Technology
RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CQ352V ✓ פעילMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ פעילהשוואת מפרטים
| פרמטר | RTAX2000SL-1CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| מותג | Microchip Technology | Microchip Technology |
| קטגוריה | FPGA & CPLD | FPGA & CPLD |
| סטטוס מחזור חיים | פעיל | פעיל |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| CLB Count | 21,504 | — |
| Logic Cells | 32,256 | [DATA_NEEDED: Logic Cells] |
| Core Supply Voltage | 1.5 V (1.425 V to 1.575 V) | — |
| Process Technology | CMOS, antifuse OTP interconnect | — |
| Radiation Tolerance | Radiation-tolerant (space flight grade) | — |
| Configuration | Live at power-up, single chip (antifuse) | Live at power-up, no external boot PROM required |
| Embedded Memory | Embedded SRAM with built-in FIFO control | Up to 540 kbits with optional EDAC protection |
| Clocking | Segmentable clock resources, chip-wide highway routing | — |
| מארז | 352-pin ceramic CQFP (CQ352) | 352-terminal ceramic CQFP, metal-sealed |
| סוג הרכבה | Surface Mount | Surface Mount |
| Application Domain | Space flight systems | Space flight systems |
| טמפרטורת פעולה | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| I/O Supply Voltage | [DATA_NEEDED: I/O bank voltage] | — |
| Total Ionizing Dose (TID) | [DATA_NEEDED: TID rating] | — |
| רמת MSL | Not applicable (ceramic package) | — |
| סטטוס RoHS | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |