RTAX2000SL-1LG1152V vs RTAX2000SL-LG1152V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000SL-1LG1152V द्वारा Microchip Technology और RTAX2000SL-LG1152V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1LG1152V ✓ सक्रियMicrochip Technology
RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-LG1152V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000SL-1LG1152V | RTAX2000SL-LG1152V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-S/SL RadTolerant FPGAs |
| Equivalent Gate Count | 2,000,000 gates | — |
| Logic Cells | 32,256 | 32256 |
| Configurable Logic Blocks (CLBs) | 21,504 | 21504 |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (space flight grade) | — |
| Speed Grade | -1 | — |
| पैकेज | CG1152 (1152-pin ceramic column grid array) | 1152-pin ceramic column grid array (CG1152) |
| Quality Suffix | V (flight grade) | — |
| Configuration | Live at power-up, single chip (no external boot PROM) | One-time programmable antifuse, live at power-up |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Process Technology | Digital CMOS | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| User I/O | [DATA_NEEDED: user I/O count] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Equivalent System Gates | — | 2000000 gates |
| Technology | — | Digital CMOS antifuse (nonvolatile) |
| User I/Os | — | Up to 684 (package dependent) |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Radiation Environment | — | Space-flight (rad-tolerant) |
| Derivative Family Base | — | Microsemi Axcelerator commercial FPGA family |