RTAX2000SL-1LG1152V vs RTAX2000SL-LG1152V Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000SL-1LG1152V sa pamamagitan ng Microchip Technology at RTAX2000SL-LG1152V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX2000SL-1LG1152V RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V ✓ Nakahanda
Microchip Technology
RTAX2000SL-LG1152V RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX2000SL-1LG1152V RTAX2000SL-LG1152V
Brand Microchip Technology Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family RTAX-S/SL Radiation-Tolerant FPGAs RTAX-S/SL RadTolerant FPGAs
Equivalent Gate Count 2,000,000 gates —
Logic Cells 32,256 32256
Configurable Logic Blocks (CLBs) 21,504 21504
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant (space flight grade) —
Speed Grade -1 —
Packhaging CG1152 (1152-pin ceramic column grid array) 1152-pin ceramic column grid array (CG1152)
Quality Suffix V (flight grade) —
Configuration Live at power-up, single chip (no external boot PROM) One-time programmable antifuse, live at power-up
Core Voltage [DATA_NEEDED: core voltage] —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Process Technology Digital CMOS —
Uri ng Pagpapasok Surface Mount Surface Mount
User I/O [DATA_NEEDED: user I/O count] —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Equivalent System Gates — 2000000 gates
Technology — Digital CMOS antifuse (nonvolatile)
User I/Os — Up to 684 (package dependent)
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Radiation Environment — Space-flight (rad-tolerant)
Derivative Family Base — Microsemi Axcelerator commercial FPGA family

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