RTAX4000SL-1CQ352E vs RTAX1000SL-CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX4000SL-1CQ352E द्वारा Microchip Technology और RTAX1000SL-CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX4000SL-1CQ352E - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX4000SL-1CQ352E ✓ सक्रियMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX4000SL-1CQ352E | RTAX1000SL-CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-SL Radiation-Tolerant FPGA | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent Gates | 4,000,000 | — |
| Logic Cells | 60,480 | 18,144 |
| CLBs | 40,320 | — |
| Process Technology | 0.15 um CMOS | 0.15 um CMOS |
| Core Supply Voltage | 1.5 V | — |
| पैकेज | 352-pin CQFP, 0.500 mm terminal pitch | 352-pin Ceramic CQFP (CQ352V) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान | -55C to +125C (extended) | [DATA_NEEDED: operating temperature range] |
| Programmability | Antifuse, one-time programmable, live at power-up | — |
| Radiation Tolerance | Radiation-tolerant (space flight qualified family) | Radiation-tolerant, space-flight qualified family |
| Packaging | Box | — |
| श्रेणी | Programmable Logic Devices - FPGA | — |
| I/O Standard Support | [DATA_NEEDED: I/O standard list] | — |
| Embedded Memory | [DATA_NEEDED: embedded SRAM block capacity] | Embedded SRAM with built-in FIFO control logic |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| MSL स्तर | [DATA_NEEDED: MSL level] | [DATA_NEEDED: moisture sensitivity level] |
| Equivalent System Gates | — | 1,000,000 |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |