10M08SAU169C8G vs 10M08SAU169A7G Perbandingan
Perbandingan bersamaan detil 10M08SAU169C8G dari Intel dan 10M08SAU169A7G dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 10M08SAU169C8G | 10M08SAU169A7G |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | MAX 10 | — |
| Logic Elements (LEs) | 8,000 | — |
| Embedded Memory (bits) | 387,072 (≈378 Kbits user flash + M9K block RAM) | — |
| User I/Os | 130 | 130 |
| Logic Array Blocks (LABs) | [DATA_NEEDED: LAB count] | — |
| M9K Block RAM (Kbits) | 173 (≈378 Kbits total embedded memory including user flash) | — |
| DSP Blocks | Yes (18x18 multiplier blocks) | — |
| PLLs | 4 analog PLLs + 2 fractional PLLs | 4 |
| On-chip ADC | Yes (single, 12-bit, 1 MSps equivalent — device dependent) | — |
| Configuration Memory | Dual-configuration on-chip flash (non-volatile, instant-on) | Internal flash (single-chip instant-on) |
| Core Voltage | 1.2 V | — |
| I/O Voltage Standards | LVCMOS/LVTTL up to 3.3 V | — |
| Speed Grade | C8 (-8) | 7 (fast) |
| Paket | 169-LFBGA (UBGA, 11x11 mm, 0.8 mm pitch) | 169-LFBGA (Ultra FineLine BGA, 11x11 mm) |
| Suhu Kerja | Commercial / Industrial (per device suffix) | -40C to +125C (automotive grade) |
| Process Node | 55 nm embedded flash | — |
| External Memory Interface | DDR3, LPDDR2, SRAM (hard IP) | — |
| PCIe Hard IP | Yes (PCIe Gen2 x1 hard IP block) | — |
| Status RoHS | Compliant | Compliant |
| Configuration Mode | JTAG (1149.1) + Active Serial (AS) | — |
| Development Toolchain | Intel Quartus Prime | — |
| Series | — | MAX 10 |
| Logic Elements (LE) | — | 8,000 |
| Embedded Memory | — | 378 Kbits (≈46 Kbytes) |
| DSP Blocks / 18x18 Multipliers | — | 16 |
| On-chip Flash | — | Dual-configuration (1.4 Mbits user flash) |
| ADC | — | 12-bit, 1 MSPS, 17 analog inputs (hard IP) |
| Process Technology | — | TSMC 55 nm embedded NOR flash |
| Tipe Mounting | — | Surface Mount (BGA) |
| Level MSL | — | 3 (168 hours) |