1ED3124MC12HXUMA1 vs 1ED3127MU12FXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3124MC12HXUMA1 dari Infineon dan 1ED3127MU12FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3124MC12HXUMA1 1ED3127MU12FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
Jumlah Output 1 1
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
Waktu naik 15 ns —
Waktu Menurun 30 ns —
Suhu Kerja -40 C to +125 C —
Paket PG-DSO-8 (DSO-8) PG-DSO-8-72 (SOIC-8 wide-body)
Tipe Mounting Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
Status RoHS Compliant Compliant
Fungsi — Single-channel isolated gate driver
Konfigurasi Output — High-side / Low-side, Inverting / Non-Inverting
Peak Output Current — 10 A (source/sink)
Continuous Output Current — 9 A
Supply Voltage (VCC2 secondary) — 12 V to 35 V
Supply Voltage (VCC1 primary) — 3 V to 5.5 V
Propagation Delay (typ.) — 15 ns
Delay Matching (typ.) — 30 ns
Galvanic Isolation — 3000 Vrms (coreless transformer)
Rentang Suhu Kerja — -40C to +125C
Protection Features — Miller clamp, UVLO, DESAT short-circuit protection
Drives — IGBT, MOSFET, SiC MOSFET

Spek dan Sumber

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