1EDN7116GXTMA1 vs 1EDN7146GXTMA1 Perbandingan
Perbandingan bersamaan detil 1EDN7116GXTMA1 dari Infineon dan 1EDN7146GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7116GXTMA1 | 1EDN7146GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | — |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | 1 |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | TDI (Truly Differential Inductor) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 4.5 V to 20 V |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| Rentang Suhu Kerja | -40 °C to +125 °C | — |
| Paket | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-VSON-10-4 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL3 | 1 |
| Status RoHS | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Driver Type | — | High-side, single-channel |
| Logic Type | — | Non-Inverting |
| Maximum Bootstrap Voltage (VB) | — | 200 V |
| Source/Sink Drive Current | — | 500 mA / 500 mA |
| Gate Drive Voltage | — | Up to 11 V (typ) |
| Propagation Delay (typ) | — | 40 ns |
| Rise/Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| UVLO (VCC) | — | Yes |
| UVLO (VB) | — | Yes |
| Bootstrap Diode | — | Integrated |
| Suhu Kerja | — | -40 C to +125 C |