1EDN7116GXTMA1 vs 1EDN7146GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7116GXTMA1 sa pamamagitan ng Infineon at 1EDN7146GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 1EDN7116GXTMA1 1EDN7146GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs —
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 1
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) TDI (Truly Differential Inductor)
Supply Voltage (VCC) 4.5 V to 5.5 V 4.5 V to 20 V
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Hanay ng Temperature na Operasyon -40 °C to +125 °C —
Packhaging PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-VSON-10-4
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL3 1
Tindminan RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Driver Type — High-side, single-channel
Logic Type — Non-Inverting
Maximum Bootstrap Voltage (VB) — 200 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated
Temperature na Operasyon — -40 C to +125 C

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