1EDN7126GXTMA1 vs 1EDN7146GXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7126GXTMA1 dari Infineon dan 1EDN7146GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 1EDN7126GXTMA1 1EDN7146GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) TDI (Truly Differential Inductor)
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Rentang Suhu Kerja -40C to +125C —
Paket PG-VSON-10-4 PG-VSON-10-4
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driver Type — High-side, single-channel
Number of Drivers — 1
Logic Type — Non-Inverting
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated
Suhu Kerja — -40 C to +125 C

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