1EDN7126GXTMA1 vs 1EDN7146GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7126GXTMA1 sa pamamagitan ng Infineon at 1EDN7146GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 1EDN7126GXTMA1 1EDN7146GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) TDI (Truly Differential Inductor)
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Hanay ng Temperature na Operasyon -40C to +125C —
Packhaging PG-VSON-10-4 PG-VSON-10-4
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL rating] 1
Tindminan RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driver Type — High-side, single-channel
Number of Drivers — 1
Logic Type — Non-Inverting
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated
Temperature na Operasyon — -40 C to +125 C

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