2EDL8033G4BXTMA1 vs 2EDL5023U2DXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8033G4BXTMA1 dari Infineon dan 2EDL5023U2DXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4BXTMA1 2EDL5023U2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Topologi Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) 1 (Half-Bridge)
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL —
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Paket PG-VDSON-8-5 PG-TSNP-12-5
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Marking Code 2ED8033G4B —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Driver Type — Non-Inverting
Jumlah Output — 2
Bootstrap Voltage Rating — 120 V
Peak Gate Drive Current — 3 A (typical sink/source)
Input Logic — TTL-compatible
Input Voltage (VDD) — 5 V (gate drive supply)
Enable Pin (EN) — Active-High (logic high or left open enables)
PWM Inputs — HI (high-side), LI (low-side)
Ground Return — VSS
Suhu Kerja — -40C to +125C (typical industrial range)
Tape and Reel Packaging — Yes

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