2EDL8033G4BXTMA1 vs 2EDN7434RXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8033G4BXTMA1 dari Infineon dan 2EDN7434RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4BXTMA1 2EDN7434RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Topologi Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL LV-TTL, non-inverting
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Paket PG-VDSON-8-5 PG-TSSOP-8 (3.0 x 3.0 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Marking Code 2ED8033G4B —
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Absolute Max Input Voltage — -12 V to +22 V
Supply Voltage Range — [DATA_NEEDED: VDD range]
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature]
Level MSL — [DATA_NEEDED: MSL rating]
Active Output Voltage Clamping — Yes

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