2EDL8033G4BXTMA1 vs 2EDN7434RXTMA1 비교

다음의 상세 나란히 비교: 2EDL8033G4BXTMA1 제조: Infineon 및 2EDN7434RXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 활성

사양 비교

파라미터 2EDL8033G4BXTMA1 2EDN7434RXTMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.49 $0.34
토폴로지 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL LV-TTL, non-inverting
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
패키지 PG-VDSON-8-5 PG-TSSOP-8 (3.0 x 3.0 mm)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Marking Code 2ED8033G4B —
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Absolute Max Input Voltage — -12 V to +22 V
Supply Voltage Range — [DATA_NEEDED: VDD range]
동작 온도 범위 — [DATA_NEEDED: operating temperature]
MSL 레벨 — [DATA_NEEDED: MSL rating]
Active Output Voltage Clamping — Yes

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