2EDL8033G4CXTMA1 vs 2EDL5013U2DXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8033G4CXTMA1 dari Infineon dan 2EDL5013U2DXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4CXTMA1 2EDL5013U2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting —
Jumlah Output 2 (HS + LS) —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
Rentang Suhu Kerja -40C to +125C -40C to +125C
Paket PG-VDSON-10-2 (10-pin VDSON with exposed pad) PG-TSNP-12-5 (12-pin, 5x5 mm)
Tipe Mounting Surface Mount Surface Mount
Marking Code 2ED8033G4C —
Status RoHS Compliant Compliant
Driver Configuration — High-Side, Low-Side (Half-Bridge)
Input Logic — Non-Inverting
Number of Channels — 2
Peak Source Current — 3 A
Peak Sink Current — 3 A
Konfigurasi Output — Non-Inverting
Supply Voltage (VCC) — 4.5 V to 5.5 V
Bootstrap Voltage Rating — 120 V max
Rise Time (typ.) — 4.4 ns
Fall Time (typ.) — 3.5 ns
Miller Clamp — 7 A active Miller clamp
Bootstrap Diode — Integrated
UVLO — VCC and VBS under-voltage lockout

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