2EDL8033G4CXTMA1 vs 2EDR8258XXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8033G4CXTMA1 dari Infineon dan 2EDR8258XXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4CXTMA1 2EDR8258XXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Isolated single-channel gate driver
Configuration High-Side / Low-Side, Non-Inverting —
Jumlah Output 2 (HS + LS) 2 (high-side and low-side, half-bridge)
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated Magnetic (coreless transformer) coupling
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
Rentang Suhu Kerja -40C to +125C -40 °C to +125 °C
Paket PG-VDSON-10-2 (10-pin VDSON with exposed pad) PG-DSO-14 (14-pin)
Tipe Mounting Surface Mount Surface Mount
Marking Code 2ED8033G4C —
Status RoHS Compliant Compliant
Number of Channels — 1
Peak Source Current — 5 A
Peak Sink Current — 9 A
Galvanic Isolation (rms) — 5700 Vrms
Galvanic Isolation (peak) — 8000 Vpk
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay (typical) — 38 ns
Driver Supply Voltage (VCC, VBS) — 8 V to 20 V
Input Supply Voltage (VDD) — 3 V to 5.5 V
Protection Features — UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection
Logic Input — Non-inverting, CMOS compatible

Spek dan Sumber

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