2EDL8033G4CXTMA1 vs 2EDR8258XXUMA1 对比

详细并排对比 2EDL8033G4CXTMA1 出自 Infineon 和 2EDR8258XXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDL8033G4CXTMA1 2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon

2EDL8033G4CXTMA1 ✓ 量产中

规格对比

参数 2EDL8033G4CXTMA1 2EDR8258XXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.84 $0.74
Product Type Half-Bridge Gate Driver IC Isolated single-channel gate driver
Configuration High-Side / Low-Side, Non-Inverting —
输出数量 2 (HS + LS) 2 (high-side and low-side, half-bridge)
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated Magnetic (coreless transformer) coupling
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
工作温度范围 -40C to +125C -40 °C to +125 °C
封装 PG-VDSON-10-2 (10-pin VDSON with exposed pad) PG-DSO-14 (14-pin)
安装类型 Surface Mount Surface Mount
Marking Code 2ED8033G4C —
RoHS 状态 Compliant Compliant
Number of Channels — 1
Peak Source Current — 5 A
Peak Sink Current — 9 A
Galvanic Isolation (rms) — 5700 Vrms
Galvanic Isolation (peak) — 8000 Vpk
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay (typical) — 38 ns
Driver Supply Voltage (VCC, VBS) — 8 V to 20 V
Input Supply Voltage (VDD) — 3 V to 5.5 V
Protection Features — UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection
Logic Input — Non-inverting, CMOS compatible

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