2EDL8124GXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan
Perbandingan bersamaan detil 2EDL8124GXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
2EDL8124GXUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | 2EDL8124GXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Configuration | Half-bridge (high-side + low-side) | — |
| Input Type | Non-inverting, TTL-compatible with hysteresis | — |
| Number of Drivers | 2 | 1 |
| Peak Source Current | 3 A | 13.5 A |
| Peak Sink Current | 4 A | 14 A |
| Bootstrap Supply (VBS) Maximum | 120 V | — |
| VCC Supply Range | [DATA_NEEDED: VCC min/max typical range] | — |
| Isolation Type | Junction isolation (JI) | — |
| Bootstrap Diode | Integrated | — |
| Propagation Delay (typical) | < 50 ns | — |
| Delay Matching Between Channels | [DATA_NEEDED: delay matching spec in ns] | — |
| UVLO | Present on VCC and VBS | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range in C] | — |
| Paket | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad | PG-DSO-8 (DSO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Jumlah Output | — | 1 |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Waktu naik | — | 15 ns |
| Waktu Menurun | — | 30 ns |
| Suhu Kerja | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |