2EDN7434RXTMA1 vs 2EDL8033G4BXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDN7434RXTMA1 dari Infineon dan 2EDL8033G4BXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDN7434RXTMA1 2EDL8033G4BXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting TTL
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
Paket PG-TSSOP-8 (3.0 x 3.0 mm) PG-VDSON-8-5
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Active Output Voltage Clamping Yes —
Topologi — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Isolation Type — Junction-isolated (non-galvanic)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
Marking Code — 2ED8033G4B

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