2EDN7434RXTMA1 vs 2EDL8033G4BXTMA1 比較

詳細並排比較 2EDN7434RXTMA1 由 Infineon 與 2EDL8033G4BXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDN7434RXTMA1 2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 ✓ 啟用中
Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 啟用中

規格比較

參數 2EDN7434RXTMA1 2EDL8033G4BXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting TTL
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
封裝 PG-TSSOP-8 (3.0 x 3.0 mm) PG-VDSON-8-5
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature] —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] —
Active Output Voltage Clamping Yes —
拓撲 — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Isolation Type — Junction-isolated (non-galvanic)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
Marking Code — 2ED8033G4B

資料表與資源

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