2EDN7533BXTSA1 vs 2EDN7533RXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDN7533BXTSA1 dari Infineon dan 2EDN7533RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDN7533BXTSA1 2EDN7533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Dual-channel low-side gate driver IC —
Number of Channels 2 2
Logic Polarity Inverting —
Peak Source/Sink Current ±5 A —
Supply Voltage (VDD) 4.5 V to 20 V —
Propagation Delay (typ.) 19 ns 19 ns
Channel-to-Channel Skew [DATA_NEEDED: skew value] —
Input Compatibility LV-TTL, -12 V to +22 V absolute max tolerant —
UVLO Integrated under-voltage lockout —
Output Clamping Active gate voltage clamping —
Rentang Suhu Kerja -40 C to +125 C —
Paket PG-SOT23-6-1 (6-pin SOT-23, 2.9x1.6 mm) PG-TSSOP-8 (HTSSOP) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Fungsi — Dual-channel low-side gate driver
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Suhu Hubung Kerja — -40 C to +150 C

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon