2N7002-7-F vs BSS138NH6327XTSA2 Perbandingan

Perbandingan bersamaan detil 2N7002-7-F dari Diodes Incorporated dan BSS138NH6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2N7002-7-F BSS138NH6327XTSA2
Merek Diodes Incorporated Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement-Mode MOSFET —
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Paket SOT-23-3 (TO-236) PG-SOT-23 (3-pin)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj / TA operating range] [DATA_NEEDED: Tj max and operating range]
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Status RoHS Compliant —
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
Bebas Halogen — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

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