2N7002-7-F vs BSS138NH6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002-7-F disebabkan oleh Diodes Incorporated dan BSS138NH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002-7-F BSS138NH6327XTSA2
Merek Diodes Incorporated Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement-Mode MOSFET —
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan SOT-23-3 (TO-236) PG-SOT-23 (3-pin)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj / TA operating range] [DATA_NEEDED: Tj max and operating range]
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Status RoHS Compliant —
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
Boson Bebas — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

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