2N7002H6327XTSA2 vs BSS214NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil 2N7002H6327XTSA2 dari Infineon dan BSS214NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 2N7002H6327XTSA2 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS (Planar) OptiMOS 2 (planar N-channel)
Drain-Source Voltage (VDS) 60 V 20 V
Continuous Drain Current (ID) 300 mA (Ta) 1.5 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
On-State Resistance (RDS(on)) 3 ohm max @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Rentang Suhu Kerja -55C to +150C (Tj) -55C to +150C (junction)
Paket PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
Tipe Mounting Surface Mount Surface Mount
Channel Mode Enhancement —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Qualification Industrial / Commercial Grade AEC-Q101 (Automotive)
FET Type — N-Channel
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Lead Finish — Pb-free lead plating (matte tin)
ESD Protection — Yes (gate ESD diode)

Spek dan Sumber

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