AIMBG120R010M1XTMA1 vs IMLT65R040M2HXTMA1 Perbandingan

Perbandingan bersamaan detil AIMBG120R010M1XTMA1 dari Infineon dan IMLT65R040M2HXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum AIMBG120R010M1XTMA1 IMLT65R040M2HXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ G1 Automotive SiC Trench MOSFET CoolSiC™ G2 (2nd generation SiC trench)
Technology Silicon Carbide (SiC) Trench MOSFET Silicon Carbide (SiC) N-channel MOSFET
Channel Type N-Channel —
Drain-Source Voltage (VDS) 1200 V 650 V
Continuous Drain Current (ID, Tc) 205 A —
On-Resistance RDS(on), typ 8.7 mΩ —
Power Dissipation (PD, Tc) 882 W —
Paket PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount PG-HDSOP-16-6 (surface mount, top-side-cooled)
Suhu Hubung Kerja -55°C to +175°C -55 °C to +150 °C
Automotive Qualification AEC-Q101 —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 7 + Tab —
Status RoHS Compliant —
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
Continuous Drain Current (ID, TC) — 57 A
Pulsed Drain Current (ID,pulse) — 143 A
On-State Resistance RDS(on) (typ, VGS=18V) — 40 mΩ
On-State Resistance RDS(on) (max, VGS=18V) — 49 mΩ
Total Gate Charge QG — 28 nC
Output Charge QOSS @ 400 V — 53 nC
Output Energy EOSS @ 400 V — 7.2 µJ
Continuous Drain Power Dissipation (PD, TC) — 268 W
Recommended Gate Drive Voltage VGS — 18 V (turn-off: 0 V or negative)
Qualification — JEDEC industrial
Packaging — Tape & Reel
Special Features — Kelvin source pin, low reverse-recovery charge, hard-switching optimized

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