AIMBG120R010M1XTMA1 vs IMLT65R040M2HXTMA1 比較
詳細並排比較 AIMBG120R010M1XTMA1 由 Infineon 與 IMLT65R040M2HXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | AIMBG120R010M1XTMA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G1 Automotive SiC Trench MOSFET | CoolSiC™ G2 (2nd generation SiC trench) |
| Technology | Silicon Carbide (SiC) Trench MOSFET | Silicon Carbide (SiC) N-channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 1200 V | 650 V |
| Continuous Drain Current (ID, Tc) | 205 A | — |
| On-Resistance RDS(on), typ | 8.7 mΩ | — |
| Power Dissipation (PD, Tc) | 882 W | — |
| 封裝 | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| 工作接面溫度 | -55°C to +175°C | -55 °C to +150 °C |
| Automotive Qualification | AEC-Q101 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 7 + Tab | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | — |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |