BFU520W vs BFU520WF Perbandingan
Perbandingan bersamaan detil BFU520W dari NXP Semiconductors dan BFU520WF dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BFU520W | BFU520WF |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | NPN | NPN |
| Technology | Silicon wideband RF BJT | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| Paket | SOT323 (3-pin plastic) | SOT323 (SC-70), 3-pin plastic |
| Tipe Mounting | Surface Mount | Surface Mount |
| AEC-Q101 | Qualified | — |
| Product Family | NXP BFU5 family | — |
| Primary Use Case | High speed, low noise small-signal to medium power RF applications | — |
| Tegangan Pemisah-Penjana (Vceo) | [DATA_NEEDED: VCEO] | — |
| Tegangan Dasar Pemisah (Vcbo) | [DATA_NEEDED: VCBO] | — |
| Continuous Collector Current (IC) | [DATA_NEEDED: IC] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot] | 450 mW |
| Frekuensi Transisi (ft) | [DATA_NEEDED: fT] | — |
| Noise Figure (NF) | [DATA_NEEDED: NF] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| Rentang Suhu Kerja | [DATA_NEEDED: TJ range] | [DATA_NEEDED: operating temperature range] |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Qualification | — | AEC-Q101 qualified |
| Status RoHS | — | Compliant |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |