BSC011N03LSATMA1 vs IQE008N03LM5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC011N03LSATMA1 dari Infineon dan IQE008N03LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC011N03LSATMA1 IQE008N03LM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) —
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) 2 V (at 250 µA per LCSC snippet)
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Rentang Suhu Kerja -55C to +150C -55°C to +150°C (typical MOSFET junction rating)
Paket PG-TDSON-8-1 (SuperSO8) PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant (per LCSC listing)
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25°C — 27 A
Continuous Drain Current (ID) at TC=25°C — 253 A
On-Resistance RDS(on) Typical — 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 89 W
Gate-Source Voltage (VGS) Max — ±20 V (typical MOSFET rating)
Technology — OptiMOS 5, Source-Down

Spek dan Sumber

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